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PBHV9050Z Datasheet Preview

PBHV9050Z Datasheet

PNP Transistor

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PBHV9050Z
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
Rev. 1 — 19 August 2010
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ High voltage
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ AEC-Q101 qualified
„ Medium power SMD plastic package
1.3 Applications
„ Electronic ballasts
„ LED driver for LED chain module
„ LCD backlighting
„ Automotive motor management
„ Flyback converters
„ Hook switch for wired telecom
„ Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCESM
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter peak
voltage
collector-emitter voltage
collector current
DC current gain
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
VBE = 0
open base
VCE = 10 V;
IC = 50 mA
Min Typ Max Unit
- - 500 V
-
-
[1] 80
- 500 V
- 0.25 A
160 300




nexperia

PBHV9050Z Datasheet Preview

PBHV9050Z Datasheet

PNP Transistor

No Preview Available !

NXP Semiconductors
PBHV9050Z
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
base
collector
emitter
collector
Simplified outline Graphic symbol
4 2, 4
123
1
3
sym028
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBHV9050Z
SC-73
plastic surface-mounted package with increased
heat sink; 4 leads
Version
SOT223
4. Marking
Table 4. Marking codes
Type number
PBHV9050Z
Marking code
V9050Z
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VCESM
collector-base voltage
collector-emitter voltage
collector-emitter peak
voltage
open emitter
open base
VBE = 0
-
-
-
VEBO
IC
ICM
IBM
emitter-base voltage
collector current
peak collector current
peak base current
open collector
single pulse;
tp 1 ms
single pulse;
tp 1 ms
-
-
-
-
Max
500
500
500
Unit
V
V
V
6
0.25
0.5
V
A
A
200 mA
PBHV9050Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
2 of 13


Part Number PBHV9050Z
Description PNP Transistor
Maker nexperia
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