BUK9Y07-30B datasheet, mosfet equivalent, NXP Semiconductors

Features and benefits

* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitable for logic level gate drive sources
* Suitable for thermally demanding e.

Application

1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitab.

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu.

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