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BUK954R4-40B - TrenchMOS logic level FET

Download the BUK954R4-40B datasheet PDF. This datasheet also covers the BUK964R4-40B variant, as both devices belong to the same trenchmos logic level fet family and are provided as variant models within a single manufacturer datasheet.

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Key Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUK964R4-40B_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BUK954R4-40B
Manufacturer NXP Semiconductors
File Size 342.79 KB
Description TrenchMOS logic level FET
Datasheet download datasheet BUK954R4-40B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com BUK95/96/9E4R4-40B TrenchMOS™ logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 961 mJ s ID ≤ 75 A s RDSon = 3.9 mΩ (typ) s Ptot ≤ 254 W. 2.