logo

BUK7E5R2-100E Datasheet, NXP Semiconductors

BUK7E5R2-100E fet equivalent, n-channel trenchmos standard level fet.

BUK7E5R2-100E Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 208.72KB)

BUK7E5R2-100E Datasheet
BUK7E5R2-100E Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 208.72KB)

BUK7E5R2-100E Datasheet

Features and benefits


* AEC Q101 compliant
* Repetitive avalanche rated
* Suitable for thermally demanding environments due to 175 °C rating
* True standard level gate with VGS.

Application

1.2 Features and benefits
* AEC Q101 compliant
* Repetitive avalanche rated
* Suitable for thermally deman.

Description

Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits
* AEC Q101 compliant.

Image gallery

BUK7E5R2-100E Page 1 BUK7E5R2-100E Page 2 BUK7E5R2-100E Page 3

TAGS

BUK7E5R2-100E
N-channel
TrenchMOS
standard
level
FET
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

Related datasheet

BUK7E04

BUK7E04-40A

BUK7E07-55B

BUK7E11-55B

BUK7E13-60E

BUK7E1R8-40E

BUK7E1R9-40E

BUK7E2R3-40C

BUK7E2R3-40E

BUK7E2R6-60E

BUK7E2R7-30B

BUK7E3R1-40E

BUK7E3R5-60E

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts