BUK7E07-55B fet equivalent, n-channel trenchmos standard level fet.
I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible
1.3 Applications
I Automotive systems I Motors, lamps and solenoids I General .
1.2 Features
I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible
1.3 Applicati.
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive cr.
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