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BUK7C06-40AITE - N-channel TrenchMOS standard level FET

General Description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and overtemperature protection.

Key Features

  • s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUK7C06-40AITE N-channel TrenchMOS standard level FET Rev. 04 — 23 June 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and overtemperature protection. www.DataSheet4U.com 1.2 Features s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor 1.3 Applications s Variable valve timing for engines s Automotive and power switching s Electrical power assisted steering s Fan control 1.4 Quick reference data s VDS ≤ 40 V s ID ≤ 155 A s RDSon = 4.7 mΩ (typ) s VF = 658 mV (typ) s SF = −1.