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BUK7C10-75AITE - N-channel TrenchPLUS standard level FET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing.

Features

  • Allows responsive temperature monitoring due to integrated temperature sensor.
  • Electrostatically robust due to integrated protection diodes.
  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Reduced component count due to integrated current sensor 1.3.

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Datasheet Details

Part number BUK7C10-75AITE
Manufacturer NXP Semiconductors
File Size 261.88 KB
Description N-channel TrenchPLUS standard level FET
Datasheet download datasheet BUK7C10-75AITE Datasheet

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Full PDF Text Transcription

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BUK7C10-75AITE N-channel TrenchPLUS standard level FET Rev. 03 — 17 February 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
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