BUK78150-55A Datasheet, NXP Semiconductors

* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitable for standard level gate drive sources 1.3 Applications
* 12 V and 24 V.

1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitab.

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe.