BUK6C3R3-75C fet equivalent, n-channel trenchmos intermediate level fet.
* AEC Q101 compliant
* High current handling capability, up to 320 A
* Low conduction losses due to very low on-state resistance
* Suitable for standard a.
1.2 Features and benefits
* AEC Q101 compliant
* High current handling capability, up to 320 A
* Low condu.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance automotiv.
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