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BUK6212-40C - N-channel TrenchMOS intermediate level FET

General Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

1.2

Overview

www.DataSheet4U.com BUK6212-40C N-channel TrenchMOS intermediate level FET Rev.

01 — 12 May 2010 Objective data sheet 1.

Product profile 1.

Key Features

  • AEC Q101 compliant.
  • Suitable for intermediate level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.