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BUK626R2-40C Datasheet, NXP Semiconductors

BUK626R2-40C fet equivalent, n-channel trenchmos intermediate level fet.

BUK626R2-40C Avg. rating / M : 1.0 rating-11

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BUK626R2-40C Datasheet

Features and benefits


* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources
* Suitable for thermally demanding environments due to 175 °C rating 1.3 Appl.

Application

1.2 Features and benefits
* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources
.

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perform.

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BUK626R2-40C Page 1 BUK626R2-40C Page 2 BUK626R2-40C Page 3

TAGS

BUK626R2-40C
N-channel
TrenchMOS
intermediate
level
FET
BUK6207-30C
BUK6207-55C
BUK6208-40C
NXP Semiconductors

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