BT236X Datasheet | NXP Semiconductors

ription Passivated triacs in a full pack, plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and thermal cycling performance. 1.2 Features s Isolated package s High ITSM 1.3 Applications s Lamp dimmers s Motor speed controllers s High inrush resistive loads s Heating and static switching 1.4 Quick reference data s VDRM ≤ 600 V (BT236X-600_600F_600G) s VDRM ≤ 800 V (BT236X-800_800G) s ITSM ≤ 65 A (t = 20 ms) s IT(RMS) ≤ 6 A s IGT ≤ 35 m A (BT236X-600_800) s IGT ≤ 25 m A (BT236X-600F) s IGT ≤ 50 m A (BT236X-600G_800G) 2. Pinning information Table 1: Pin 1 2 3 mb Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) mounting base; isolated mb T2 sym051 Simplified outline Symbol T1 G 1 2 3 .. SOT186A (3-lead TO-220F) Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 3. Ordering information Table 2: Ordering information Package Name BT236X-600 BT236X-600F BT236X-600G BT236X-800 BT236X-800G 3-lead TO-220F Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 ‘full pack’ Version SOT186A Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM Parameter repetitive peak off-state voltage BT236X-600 BT236X-600F BT236X-600G BT236X-800 BT236X-800G IT(RMS) ITSM RMS on-state current non-repetitive peak on-state current full sine wave; Th ≤ 88 °C; see Figure 4 and 5 full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms I2t d IT/dt I2t for fusing rate of rise of on-state current t = 10 ms ITM = 12 A; IG = 0.2 A; d IG/dt = 0.2 A/µs T2+ G+ T2+ G- T2- G- T2- G+ IGM VGM PGM PG(AV) peak gate current peak gate voltage peak gate power average gate power over any 20 ms period - 40 50 50 50 10 2 5 5 0.5 +150 125 A/µs A/µs A/µs A/µs A V W W °C °C 65 71 21 A A A2s [1] [1] [1] Conditions Min - Max 600 600 600 800 800 6 Unit V V...