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BLS6G3135S-20 Datasheet, NXP Semiconductors

BLS6G3135S-20 transistor equivalent, ldmos s-band radar power transistor.

BLS6G3135S-20 Avg. rating / M : 1.0 rating-11

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BLS6G3135S-20 Datasheet

Features and benefits

I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N P.

Application

in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = .

Description

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of oper.

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TAGS

BLS6G3135S-20
LDMOS
S-Band
radar
power
transistor
BLS6G3135S-120
BLS6G3135-120
BLS6G3135-20
NXP Semiconductors

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