BLS6G3135S-120 Datasheet LDMOS S-Band radar power transistor

Manufacturer: NXP Semiconductors

Download the BLS6G3135S-120 datasheet PDF. This datasheet also includes the BLS6G3135-120 variant, as both parts are published together in a single manufacturer document.

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BLS6G3135S-120 ldmos s-band radar power transistor by NXP Semiconductors - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BLS6G3135-120_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BLS6G3135S-120
Manufacturer	NXP Semiconductors
File Size	106.19 KB
Description	LDMOS S-Band radar power transistor
Datasheet	BLS6G3135S-120 Datasheet

General Description

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C;

Overview

www.DataSheet4U.com BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev.

01 — 14 August 2007 Preliminary data sheet 1.

Product proﬁle 1.

Key Features

I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 120 W N Gain = 11 dB N Efﬁciency = 43 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substanc.

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