BLS6G3135S-120

The BLS6G3135S-120 is LDMOS S-Band radar power transistor designed by NXP Semiconductors.

Product Overview

NXP Semiconductors

Part number	BLS6G3135S-120, BLS6G3135-120
Manufacturer	NXP Semiconductors
File Size	106.19 KB
Description	LDMOS S-Band radar power transistor
Datasheet	BLS6G3135-120_NXPSemiconductors.pdf
Note	This datasheet PDF includes multiple part numbers: BLS6G3135S-120, BLS6G3135-120. Please refer to the document for exact specifications by model.
Additional preview pages of the BLS6G3135S-120 datasheet.

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 120 W N Gain = 11 dB N Efﬁciency = 43 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substanc.

📁 Similar Datasheet

Other Datasheets by NXP Semiconductors

Published: Jul 29, 2009 |