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BLS6G3135S-120 Datasheet, NXP Semiconductors

BLS6G3135S-120 transistor equivalent, ldmos s-band radar power transistor.

BLS6G3135S-120 Avg. rating / M : 1.0 rating-14

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BLS6G3135S-120 Datasheet

Features and benefits

I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 12.

Application

in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = .

Description

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of op.

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TAGS

BLS6G3135S-120
LDMOS
S-Band
radar
power
transistor
BLS6G3135S-20
BLS6G3135-120
BLS6G3135-20
NXP Semiconductors

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