BLL6H0514LS-130 transistor equivalent, ldmos driver transistor.
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* Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High effi.
in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; .
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960.
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