BLF882S transistor equivalent, uhf power ldmos transistor.
* Integrated ESD protection
* Excellent ruggedness
* High power gain
* High efficiency
* Excellent reliability
* Easy power control
* Complian.
and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellen.
A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device mak.
Image gallery
TAGS
Download (Size : 137.48KB)