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BLF882 - UHF power LDMOS transistor

Description

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 200 W in broadband applications from HF to 860 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features

  • Integrated ESD protection.
  • Excellent ruggedness.
  • High power gain.
  • High efficiency.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

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Datasheet Details

Part number BLF882
Manufacturer NXP Semiconductors
File Size 137.48 KB
Description UHF power LDMOS transistor
Datasheet download datasheet BLF882 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLF882; BLF882S UHF power LDMOS transistor Rev. 2 — 3 July 2015 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at Tcase = 25 C in a class-AB test circuit.
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