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BLF6G22LS-100 Datasheet, NXP Semiconductors

BLF6G22LS-100 transistor equivalent, power ldmos transistor.

BLF6G22LS-100 Avg. rating / M : 1.0 rating-16

datasheet Download (Size : 160.20KB)

BLF6G22LS-100 Datasheet
BLF6G22LS-100
Avg. rating / M : 1.0 rating-16

datasheet Download (Size : 160.20KB)

BLF6G22LS-100 Datasheet

Features and benefits


* Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: ‹ Average output power = 25 W ‹ Gain = .

Application

at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common sourc.

Description

100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA .

Image gallery

BLF6G22LS-100 Page 1 BLF6G22LS-100 Page 2 BLF6G22LS-100 Page 3

TAGS

BLF6G22LS-100
Power
LDMOS
transistor
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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