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BLF6G22LS-180RN Datasheet, NXP

BLF6G22LS-180RN transistor equivalent, power ldmos transistor.

BLF6G22LS-180RN Avg. rating / M : 1.0 rating-12

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BLF6G22LS-180RN Datasheet

Features and benefits

I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain.

Application

at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a clas.

Description

180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f.

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TAGS

BLF6G22LS-180RN
Power
LDMOS
Transistor
NXP

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