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BLF6G20LS-140 Datasheet, NXP Semiconductors

BLF6G20LS-140 transistor equivalent, power ldmos transistor.

BLF6G20LS-140 Avg. rating / M : 1.0 rating-12

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BLF6G20LS-140 Datasheet

Features and benefits

I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: N Average output power = 35.5 W N Power ga.

Application

at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common sourc.

Description

140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA .

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BLF6G20LS-140 Page 1 BLF6G20LS-140 Page 2 BLF6G20LS-140 Page 3

TAGS

BLF6G20LS-140
Power
LDMOS
transistor
BLF6G20LS-110
BLF6G20LS-180RN
BLF6G20-110
NXP Semiconductors

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