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BLF6G20LS-110 Datasheet, NXP Semiconductors

BLF6G20LS-110 transistor equivalent, power ldmos transistor.

BLF6G20LS-110 Avg. rating / M : 1.0 rating-11

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BLF6G20LS-110 Datasheet

Features and benefits

I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain .

Application

at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common sourc.

Description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA .

Image gallery

BLF6G20LS-110 Page 1 BLF6G20LS-110 Page 2 BLF6G20LS-110 Page 3

TAGS

BLF6G20LS-110
Power
LDMOS
transistor
NXP Semiconductors

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