BF1207 Datasheet | NXP Semiconductors

description The BF1207 is a bination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with partly integrated bias s Internal switch to save external ponents s Superior cross-modulation performance during AGC s High forward transfer admittance s High forward transfer admittance to input capacitance ratio 1.3 Applications s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 5 V supply voltage, such as digital and analog television tuners and professional munication equipment Philips Semiconductors .. Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter VDS ID Ptot yfs drain-source voltage drain current total power dissipation forward transfer admittance Conditions DC DC Tsp ≤ 107 °C f = 1 MHz amplifier A; ID = 18 m A amplifier B; ID = 14 m A Ciss(G1) input capacitance at gate1 f = 100 MHz amplifier A amplifier B Crss NF Xmod reverse transfer capacitance f = 100 MHz noise figure cross-modulation amplifier A; f = 400 MHz amplifier B; f = 800 MHz input level for k = 1 % at 40 d B AGC amplifier A amplifier B Tj [1] [1] Min 25 26 - Typ 30 31 2.2 1.9 20 1.3 1.4 Max Unit 6 30 180 40 41 2.7 2.4 V m A m W m S m S p F p F f F d B d B 100 100 - 105 103 - 150 d BµV d BµV °C junction temperature Tsp...