Datasheet Details
| Part number | BF1205 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 626.42 KB |
| Description | Dual N-channel dual gate MOS-FET |
| Datasheet |
 BF1205 Datasheet
|
|
|
Description
1 gate 1 (a) 2 gate 2 3 gate 1 (b) 4 drain (b) 5 source 6 drain (a) APPLICATIONSGain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners and professional communications equipment.
Features
- Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias.
- Internal switch reduces the number of external components.
- Superior cross-modulation performance during AGC.
- High forward transfer admittance.
- High forward transfer admittance to input capacitance ratio.