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NXP Semiconductors Electronic Components Datasheet

SI2302DS Datasheet

N-channel enhancement mode field-effect transistor

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SI2302DS
N-channel enhancement mode field-effect transistor
Rev. 02 — 20 November 2001
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
SI2302DS in SOT23.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.
3. Applications
s Battery management
s High speed switch
s Low power DC to DC converter.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 source (s)
3
3 drain (d)
12
Top view
MSB003
SOT23
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.


NXP Semiconductors Electronic Components Datasheet

SI2302DS Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

Philips Semiconductors
SI2302DS
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 150 °C
Tsp = 25 °C; VGS = 4.5 V
Tsp = 25 °C
VGS = 4.5 V; ID = 3.6 A
VGS = 2.5 V; ID = 3.1 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage (DC)
VGS gate-source voltage (DC)
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tj = 25 to 150 °C
Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3
Tsp = 70 °C; VGS = 4.5 V; Figure 2
Tsp = 25 °C; pulsed; tp 10 µs; Figure 3
Tsp = 25 °C; Figure 1
IS source (diode forward) current (DC) Tsp = 25 °C
Typ Max Unit
20 V
2.5 A
0.83 W
150 °C
56 85 m
77 115 m
Min Max Unit
20 V
− ±8 V
2.5 A
2A
10 A
0.83 W
65 +150 °C
65 +150 °C
0.7 A
9397 750 09107
Product data
Rev. 02 — 20 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
2 of 12


Part Number SI2302DS
Description N-channel enhancement mode field-effect transistor
Maker NXP
Total Page 12 Pages
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