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SI2302DS - N-Channel MOSFET

Key Features

  • s.
  • VDS=20V.
  • RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A.
  • RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 G1 S2 3D +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.10.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.
  • 1 Ta=25℃ Ta=70℃ Pulsed Drain Current Power Dissipation Ta=25℃ T.

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SMD Type N-Channel Enhancement MOSFET SI2302DS (KI2302DS) ■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 G1 S2 3D +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 Ta=25℃ Ta=70℃ Pulsed Drain Current Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient *1 *2 Junction Temperature Storage Temperature Range Notes: *1.Surface Mounted on FR4 Board, t ≤ 5 sec. *2.Surface Mounted on FR4 Board. Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 20 ±8 2.8 2.