PSMN4R0-60YS datasheet, mosfet equivalent, NXP

Features and benefits

* Advanced TrenchMOS provides low RDSon and low gate charge
* High efficiency in switching power converters
* Improved mechanical and thermal characteristics .

Application

* DC-to-DC converters
* Lithium-ion battery protection
* Load switching
* Motor control
* Server pow.

Description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of telecom, industrial and domestic equipment. 2. Features and benefits
* Advanced TrenchMOS provides low RDSon .

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