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PSMN4R0-60YS - N-channel MOSFET

General Description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C.

This product is designed and qualified for use in a wide range of telecom, industrial and domestic equipment.

2.

Key Features

  • Advanced TrenchMOS provides low RDSon and low gate charge.
  • High efficiency in switching power converters.
  • Improved mechanical and thermal characteristics.
  • LFPAK provides maximum power density in a Power SO8 package 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 mΩ standard level FET 14 May 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of telecom, industrial and domestic equipment. 2. Features and benefits • Advanced TrenchMOS provides low RDSon and low gate charge • High efficiency in switching power converters • Improved mechanical and thermal characteristics • LFPAK provides maximum power density in a Power SO8 package 3. Applications • DC-to-DC converters • Lithium-ion battery protection • Load switching • Motor control • Server power supplies • Telecom power 4. Quick reference data Table 1.