PMZB320UPE datasheet, mosfet equivalent, NXP

Features and benefits

* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Ultra thin package pr.

Application

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference .

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Low th.

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