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NXP Semiconductors Electronic Components Datasheet

PMGD290UCEA Datasheet

725 / 500 mA N/P-channel Trench MOSFET

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PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
28 March 2014
Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very
small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
2 kV ESD protection
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Automotive applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
resistance
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -400 mA; Tj = 25 °C
resistance
TR1 (N-channel)
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
TR2 (P-channel)
VDS drain-source voltage Tj = 25 °C
[1]
Min Typ Max Unit
- 290 380 mΩ
- 670 850 mΩ
--
-8 -
--
--
20 V
8V
725 mA
-20 V
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NXP Semiconductors Electronic Components Datasheet

PMGD290UCEA Datasheet

725 / 500 mA N/P-channel Trench MOSFET

No Preview Available !

NXP Semiconductors
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
Symbol
VGS
ID
Parameter
gate-source voltage
drain current
Conditions
VGS = -4.5 V; Tamb = 25 °C
Min Typ Max Unit
-8 -
8V
[1] - - -500 mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 S1 source TR1
2 G1 gate TR1
3 D2 drain TR2
4 S2 source TR2
5 G2 gate TR2
6 D1 drain TR1
Simplified outline
654
Graphic symbol
D1
D2
123
TSSOP6 (SOT363)
G1
G2
S1 S2
017aaa262
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMGD290UCEA
TSSOP6
Description
plastic surface-mounted package; 6 leads
Version
SOT363
7. Marking
Table 4. Marking codes
Type number
PMGD290UCEA
Marking code
[1]
YD%
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
TR1 (N-channel)
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
PMGD290UCEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 March 2014
Min Max Unit
- 20 V
-8 8
V
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 21


Part Number PMGD290UCEA
Description 725 / 500 mA N/P-channel Trench MOSFET
Maker NXP
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