Datasheet Summary
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
28 March 2014
Product data sheet
1. General description plementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Very fast switching
- Trench MOSFET technology
- 2 kV ESD protection
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
- Automotive applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel), Static characteristics
RDSon drain-source on-state...
