• Part: PMEM4020PD
  • Description: PNP transistor/Schottky-diode module
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 118.80 KB
Download PMEM4020PD Datasheet PDF
NXP Semiconductors
PMEM4020PD
FEATURES - 600 m W total power dissipation - High current capability - Reduces required PCB area - Reduced pick and place costs - Small plastic SMD package. Transistor - Low collector-emitter saturation voltage. Diode - Ultra high-speed switching - Very low forward voltage - Guard ring protected. APPLICATIONS - DC-to-DC converters - Inductive load drivers - General purpose load drivers - Reverse polarity protection circuits. DESCRIPTION bination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN plement: PMEM4020ND. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020PD - DESCRIPTION plastic surface mounted package; 6 leads Marking code: B7. handbook, halfpage 6 PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION 4 5 1 3 6 MGU868 Fig.1 Simplified outline (SOT457) and...