Datasheet4U Logo Datasheet4U.com

PMEM4020ND - NPN transistor/Schottky-diode module

Description

Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package.

PNP complement: PMEM4020PD.

Features

  • 600 mW total power dissipation.
  • High current capability.
  • Reduces required PCB area.
  • Reduced pick and place costs.
  • Small plastic SMD package. Transistor:.
  • Low collector-emitter saturation voltage. Diode:.
  • Ultra high-speed switching.
  • Very low forward voltage.
  • Guard ring protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PME-0503SH30Z 0.25 Watt DC-DC Converter Make-Ps
PME-0503SZ 0.25 Watt DC-DC Converter Make-Ps
PME-0505SH30Z 0.25 Watt DC-DC Converter Make-Ps
PME-0505SZ 0.25 Watt DC-DC Converter Make-Ps
PME-0507SH30Z 0.25 Watt DC-DC Converter Make-Ps

Other Datasheets by NXP Semiconductors

Part Number Description
PMEM4020AND NPN transistor/Schottky rectifer module
PMEM4020APD PNP transistor/Schottky rectifer module
PMEM4020PD PNP transistor/Schottky-diode module
PMEM4010PD PNP transistor/Schottky diode module
PMEM4030NS NPN transistor/Schottky rectifer module

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor/Schottky-diode module Product specification 2003 Nov 10 Philips Semiconductors Product specification NPN transistor/Schottky-diode module FEATURES • 600 mW total power dissipation • High current capability • Reduces required PCB area • Reduced pick and place costs • Small plastic SMD package. Transistor: • Low collector-emitter saturation voltage. Diode: • Ultra high-speed switching • Very low forward voltage • Guard ring protected. APPLICATIONS • DC-to-DC converters • Inductive load drivers • MOSFET drivers.
Published: |