PHX6N60E Datasheet | NXP Semiconductors

FEATURES - Repetitive Avalanche Rated - Fast switching - Stable off-state characteristics - High thermal cycling performance - Isolated package SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 2.8 A RDS(ON) ≤ 1.8 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX6N60E is supplied in the SOT186A full pack, isolated package. PINNING PIN 1 2 3 case gate drain source isolated DESCRIPTION SOT186A case 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Ths = 25 ˚C; VGS = 10 V Ths = 100 ˚C; VGS = 10 V Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 600 600 ± 30 2.8 1.8 21 35 150 UNIT V V V A A A W ˚C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy CONDITIONS MIN. MAX. 341 UNIT m J Unclamped inductive load, IAS = 4.4 A; tp = 0.2 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 5.4 A; tp = 2.5 µs; Tj prior to avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current EAR IAS, IAR - 10 5.4 m J A 1 pulse width and repetition rate limited by Tj max. December 1998 1 Rev 1.200 Philips Semiconductors Product specification Power MOS transistors Avalanche energy rated ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation...