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PHU77NQ03T Datasheet

N-channel TrenchMOS FET

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PHD/PHU77NQ03T
N-channel TrenchMOS FET
Rev. 01 — 28 November 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Fast switching
I Low thermal resistance
1.3 Applications
I DC-to-DC converters
I Computer motherboard
1.4 Quick reference data
I VDS 25 V
I RDSon 9.5 m
I ID 75 A
I QGD = 3.2 nC (typ)
2. Pinning information
Table 1. Pinning
Pin Description
1 gate (G)
2 drain (D)
3 source (S)
mb mounting base; connected to
drain (D)
Simplified outline
[1]
mb
2
13
SOT428 (DPAK)
[1] It is not possible to make a connection to pin 2 of the SOT428 package.
Symbol
mb
D
123
SOT533 (IPAK)
G
mbb076 S


NXP Semiconductors Electronic Components Datasheet

PHU77NQ03T Datasheet

N-channel TrenchMOS FET

No Preview Available !

NXP Semiconductors
PHD/PHU77NQ03T
N-channel TrenchMOS FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
PHD77NQ03T
DPAK
PHU77NQ03T
IPAK
Description
plastic single-ended surface-mounted package; 3 leads
(one lead cropped)
plastic single-ended package; 3 leads (in-line)
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; see Figure 3
Tmb = 25 °C; see Figure 1
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 32 A;
tp = 0.17 ms; VDS 25 V; RGS = 50 ;
VGS = 10 V; starting at Tj = 25 °C
Min
-
-
-
-
-
-
-
55
55
-
-
-
Version
SOT428
SOT533
Max
25
25
±20
75
55.9
240
107
+175
+175
Unit
V
V
V
A
A
A
W
°C
°C
75 A
240 A
100 mJ
PHD_PHU77NQ03T_1
Product data sheet
Rev. 01 — 28 November 2006
© NXP B.V. 2006. All rights reserved.
2 of 13


Part Number PHU77NQ03T
Description N-channel TrenchMOS FET
Maker NXP
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