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PHU2N50E - PowerMOS transistors Avalanche energy rated

Description

N-channel, enhancement mode field-effect power transistor, intended for use in Compact Fluorescent Lamps (CFL) and low power ballasts.

The PHU2N50E is compatible with self oscillating and IC driven circuits, including the UBA2021 ballast controller IC.

Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance.
  • Extremely high dV/dt capability PHU2N50E QUICK.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Extremely high dV/dt capability PHU2N50E QUICK REFERENCE DATA VDSS = 500 V ID = 2 A RDS(ON) ≤ 5 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in Compact Fluorescent Lamps (CFL) and low power ballasts. The PHU2N50E is compatible with self oscillating and IC driven circuits, including the UBA2021 ballast controller IC. Other applications include off line switched mode power supplies and D.C. to D.C. converters. The PHU2N50E is supplied in the SOT533 (I-PAK) leaded package.
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