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PHU101NQ03LT Datasheet

TrenchMOS logic level FET

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PHP/PHU101NQ03LT
TrenchMOS™ logic level FET
Rev. 02 — 25 February 2003
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHP101NQ03LT in SOT78 (TO-220AB)
PHU101NQ03LT in SOT533 (I-PAK).
2. Features
s Low gate charge
s Low on-state resistance.
3. Applications
s Optimized as a control FET in DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT78, SOT533 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base,
connected to drain (d)
Symbol
d
g
MBB076
s
MBK106
123
SOT78 (TO-220AB)
123
Top view
MBK915
SOT533 (I-PAK)


NXP Semiconductors Electronic Components Datasheet

PHU101NQ03LT Datasheet

TrenchMOS logic level FET

No Preview Available !

Philips Semiconductors
PHP/PHU101NQ03LT
TrenchMOS™ logic level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C Tj 175 °C
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
Tj = 25 °C; VGS = 10 V; ID = 25 A
Tj = 25 °C; VGS = 5 V; ID = 25 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
tp 50 µs; pulsed;
duty cycle 25%; Tj 150 °C
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS source (diode forward) current (DC) Tmb = 25 °C
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 43 A;
tp = 0.19 ms; VDD 15 V; RGS = 50 ;
VGS = 10 V; starting Tj = 25 °C
Typ Max Unit
- 30 V
- 75 A
- 166 W
- 175 °C
4.5 5.5 m
5.8 7.0 m
Min Max Unit
- 30 V
- 30 V
- ±20 V
- ±25 V
- 75 A
- 75 A
- 240 A
- 166 W
55 +175 °C
55 +175 °C
- 75 A
- 240 A
- 185 mJ
9397 750 10927
Product data
Rev. 02 — 25 February 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
2 of 13


Part Number PHU101NQ03LT
Description TrenchMOS logic level FET
Maker NXP
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