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NXP Semiconductors Electronic Components Datasheet

PHT6NQ10T Datasheet

N-channel TrenchMOS transistor

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Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHT6NQ10T
FEATURES
’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 100 V
ID = 6.5 A
RDS(ON) 90 m
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect transistor in a plastic
envelope
using
trench
technology.
Applications:-
• Motor and relay drivers
• d.c. to d.c. converters
The PHT6NQ10T is supplied in the
SOT223 surface mounting
package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
SOT223
4
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Continuous drain current (dc) Tsp = 25 ˚C
Tamb = 25 ˚C
Continuous drain current (dc) Tsp = 100 ˚C
Tamb = 100 ˚C
Pulsed drain current
Total power dissipation
Operating junction and
Tsp = 25 ˚C
Tamb = 25 ˚C
storage temperature
MIN.
-
-
-
-
-
-
-
-
-
-
- 65
MAX.
100
100
± 20
6.5
3
4.1
1.9
26
8.3
1.8
150
UNIT
V
V
V
A
A
A
A
A
W
W
˚C
THERMAL RESISTANCES
SYMBOL
Rth j-sp
Rth j-amb
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
CONDITIONS
surface mounted, FR4
board
surface mounted, FR4
board
TYP.
12
70
MAX.
15
-
UNIT
K/W
K/W
August 1999
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHT6NQ10T Datasheet

N-channel TrenchMOS transistor

No Preview Available !

Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHT6NQ10T
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
VDS = VGS; ID = 1 mA
VGS = 10 V; ID = 3 A
VGS = ±10 V; VDS = 0 V
VDS = 100 V; VGS = 0 V;
Tj = -55˚C
Tj = 150˚C
Tj = -55˚C
Tj = 150˚C
Tj = 150˚C
ID = 6 A; VDD = 80 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 50 V; RD = 8.2 ;
VGS = 10 V; RG = 5.6
Resistive load
Internal drain inductance
Internal source inductance
Measured tab to centre of die
Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
100 -
-V
89 -
-V
234V
1.2 -
-V
- 6V
- 57 90 m
- - 216 m
- 10 100 nA
- 0.05 10 µA
- - 500 µA
- 21 - nC
- 2.5 - nC
- 8.2 - nC
- 6 - ns
- 15 - ns
- 20 - ns
- 10 - ns
- 2.5 - nH
- 5 - nH
- 633 -
- 103 -
- 61 -
pF
pF
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS Continuous source current Tsp = 25 ˚C
(body diode)
ISM Pulsed source current (body
diode)
VSD Diode forward voltage
IF = 6 A; VGS = 0 V
trr
Reverse recovery time
IF = 6 A; -dIF/dt = 100 A/µs;
Qrr Reverse recovery charge VGS = 0 V; VR = 25 V
MIN. TYP. MAX. UNIT
- - 5.5 A
- - 26 A
- 0.8 1.2 V
- 55 - ns
- 135 - nC
August 1999
2
Rev 1.000


Part Number PHT6NQ10T
Description N-channel TrenchMOS transistor
Maker NXP
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