PHT6NQ10T
Description
N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications: - Motor and relay drivers - d.c.
Key Features
- Low on-state resistance
- Fast switching
- Low SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 6.5 A g RDS(ON) ≤ 90 mΩ s
