Datasheet4U Logo Datasheet4U.com

PHT4NQ10LT - N-channel enhancement mode field-effect transistor

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: PHT4NQ10LT in SOT223.

2.

Features

  • s s s s s TrenchMOS™ technology Fast switching Low on-state resistance Surface mount package Logic level compatible. 3.

📥 Download Datasheet

Datasheet preview – PHT4NQ10LT

Datasheet Details

Part number PHT4NQ10LT
Manufacturer NXP
File Size 347.10 KB
Description N-channel enhancement mode field-effect transistor
Datasheet download datasheet PHT4NQ10LT Datasheet
Additional preview pages of the PHT4NQ10LT datasheet.
Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
PHT4NQ10LT N-channel enhancement mode field-effect transistor M3D087 Rev. 01 — 11 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT4NQ10LT in SOT223. 2. Features s s s s s TrenchMOS™ technology Fast switching Low on-state resistance Surface mount package Logic level compatible. 3. Applications c c s Primary side switch in DC to DC convertors s High speed driver s Fast general purpose switch. 4. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description gate (g) 4 Simplified outline Symbol drain (d) source (s) drain (d) 1 Top view d g 2 3 MSB002 - 1 MBB076 s SOT223 1.
Published: |