NXP Semiconductors PHT6N06T
TrenchMOS transistor Standard level FET
| Part No. | PHT6N06T |
|---|---|
| Datasheet | PHT6N06T Download |
| Manufacturer |  NXP Semiconductors |
| Description | TrenchMOS transistor Standard level FET |
| Buy | Stock & Price |
DESCRIPTION
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223. 1.2FEATURES
s Low on-state resistance s Fast switching s Low QGD s Surface mounting package. 1.3APPLICATIONS
s DC to DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.3 W s ID ≤ 5.5 A s RDSon ≤ 150 mΩ 2. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbolDESCRIPTION
Simplified outline gate (g) drain (d) 4 source (s) drain (d) Symbol d g MBB076 s 1 2 3 Top view MSB002 - 1 SOT223 Philips Semiconductors PHT6N06T TrenchMOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) IDM peak drain current Ptot total power dissipation Tstg storage temperatu...
