Datasheet Summary
N-channel enhancement mode field-effect transistor
Rev. 01
- 31 July 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT4NQ10T in SOT223.
2. Features s TrenchMOS™ technology s Very fast switching s Surface mount package.
3. Applications s Primary side switch in DC to DC converters s High speed line driver s Fast general purpose switch. c c
4. Pinning information
Table 1: Pin 1 2 3 4 Pinning
- SOT223, simplified outline and symbol Description gate (g) drain (d) source (g) drain (d)
03ab45
Simplified outline
Symbol d g
3 s
03ab30
SOT223
N-channel...