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PHT4NQ10T - N-channel enhancement mode field-effect transistor

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: PHT4NQ10T in SOT223.

2.

Features

  • s TrenchMOS™ technology s Very fast switching s Surface mount package. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHT4NQ10T N-channel enhancement mode field-effect transistor Rev. 01 — 31 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT4NQ10T in SOT223. 2. Features s TrenchMOS™ technology s Very fast switching s Surface mount package. 3. Applications s Primary side switch in DC to DC converters s High speed line driver s Fast general purpose switch. c c 4. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description gate (g) drain (d) source (g) drain (d) 03ab45 Simplified outline 4 Symbol d g 1 2 3 s 03ab30 SOT223 N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics.
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