PHT4NQ10T
Description
N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™1 technology. Product availability: PHT4NQ10T in SOT223.
2. Features s Trench MOS™ technology s Very fast switching s Surface mount package.
3. Applications s Primary side switch in DC to DC converters s High speed line driver s Fast general purpose switch. c c
4. Pinning information
Table 1: Pin 1 2 3 4 Pinning
- SOT223, simplified outline and symbol Description gate (g) drain (d) source (g) drain (d)
03ab45
Simplified outline
Symbol d g
3 s
03ab30
SOT223
N-channel MOSFET
1.
Trench MOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150°C Tsp = 25 °C; VGS = 10 V Tsp = 25 °C VGS = 10 V; ID = 1.75 A Typ
- -
- - 200 Max 100 3.5 6.9 150 250 Unit V A W °C mΩ drain-source voltage (DC) drain current...
