PHT1N60R PowerMOS transistor

NXP

PHT1N60R Description

Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capabilit.

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Datasheet Details

Part number: PHT1N60R
Manufacturer: NXP ↗
File Size: 30.35 KB
Datasheet: PHT1N60R_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

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PowerMOS transistor NXP

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