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PHT1N52S - PowerMOS transistor

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Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance.

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Datasheet Details

Part number PHT1N52S
Manufacturer NXP
File Size 27.59 KB
Description PowerMOS transistor
Datasheet download datasheet PHT1N52S Datasheet
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Philips Semiconductors Objective specification PowerMOS transistor PHT1N52S GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights (CFL) and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 520 0.6 1.
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