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PHK5NQ15T Datasheet

N-channel TrenchMOS standard level FET

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PHK5NQ15T
N-channel TrenchMOS standard level FET
Rev. 02 — 4 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ DC-to-DC convertors switching
„ General purpose switching
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 150 °C
ID drain current
Tsp = 25 °C; VGS = 10 V;
see Figure 1 and 3
- - 150 V
- - 5A
Ptot total power
dissipation
Tsp = 25 °C; see Figure 2
- - 6.25 W
Dynamic characteristics
QGD gate-drain charge
Static characteristics
VGS = 10 V; ID = 5 A; VDS = 75 V; -
Tj = 25 °C; see Figure 11
12 -
nC
RDSon
drain-source
VGS = 10 V; ID = 5 A; Tj = 25 °C;
on-state resistance see Figure 9 and 10
-
56 75 m
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NXP Semiconductors Electronic Components Datasheet

PHK5NQ15T Datasheet

N-channel TrenchMOS standard level FET

No Preview Available !

NXP Semiconductors
PHK5NQ15T
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1S
source
2S
source
3S
source
4G
gate
5D
drain
6D
drain
7D
drain
8D
drain
3. Ordering information
Simplified outline
85
14
SOT96-1 (SO8)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PHK5NQ15T
SO8
plastic small outline package; 8 leads; body width 3.9 mm
4. Limiting values
Version
SOT96-1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tj 25 °C; Tj 150 °C
Tj 25 °C; Tj 150 °C; RGS = 20 k
Tsp = 100 °C; VGS = 10 V; see Figure 1
Tsp = 25 °C; VGS = 10 V; see Figure 1 and 3
Tsp = 25 °C; tp 10 µs; pulsed; see Figure 3
Tsp = 25 °C; see Figure 2
IS source current
ISM peak source current
Tsp = 25 °C
Tsp = 25 °C; tp 10 µs; pulsed
Min Max Unit
- 150 V
- 150 V
-20 20
V
- 3.23 A
- 5A
- 20 A
- 6.25 W
-55 150 °C
-55 150 °C
- 5A
- 20 A
PHK5NQ15T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 March 2010
© NXP B.V. 2010. All rights reserved.
2 of 13
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Part Number PHK5NQ15T
Description N-channel TrenchMOS standard level FET
Maker NXP
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