PHK5NQ15T
N-channel TrenchMOS standard level FET
Rev. 02 — 4 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
1.3 Applications
DC-to-DC convertors switching
General purpose switching
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID drain current
Tsp = 25 °C; VGS = 10 V;
see Figure 1 and 3
- - 150 V
- - 5A
Ptot total power
dissipation
Tsp = 25 °C; see Figure 2
- - 6.25 W
Dynamic characteristics
QGD gate-drain charge
Static characteristics
VGS = 10 V; ID = 5 A; VDS = 75 V; -
Tj = 25 °C; see Figure 11
12 -
nC
RDSon
drain-source
VGS = 10 V; ID = 5 A; Tj = 25 °C;
on-state resistance see Figure 9 and 10
-
56 75 mΩ
Free Datasheet http://www.datasheet4u.com/
