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PHK5NQ15T - N-channel TrenchMOS standard level FET

General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Low conduction losses due to low on-state resistance 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHK5NQ15T N-channel TrenchMOS standard level FET Rev. 02 — 4 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance 1.3 Applications „ DC-to-DC convertors switching „ General purpose switching 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tsp = 25 °C; VGS = 10 V; see Figure 1 and 3 Tsp = 25 °C; see Figure 2 Min Typ Max 150 5 6.