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NXP Semiconductors Electronic Components Datasheet

PHB10N40 Datasheet

PowerMOS transistor

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Philips Semiconductors
PowerMOS transistor
Product specification
PHB10N40
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mounting featuring high avalanche
energy capability, stable blocking
voltage, fast switching and high
thermal cycling performance with low
thermal resistance. Intended for use
in Switched Mode Power Supplies
(SMPS), motor control circuits and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
400
10.7
147
0.55
UNIT
V
A
W
PINNING - SOT404
PIN DESCRIPTION
1 gate
2 drain
3 source
mb drain
PIN CONFIGURATION
mb
2
13
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
ID Continuous drain current
IDM
PD
PD/Tmb
VGS
EAS
IAS
Pulsed drain current
Total dissipation
Linear derating factor
Gate-source voltage
Single pulse avalanche
energy
Peak avalanche current
Tj, Tstg
Operating junction and
storage temperature range
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
Tmb > 25 ˚C
VDD 50 V; starting Tj = 25˚C; RGS = 50 ;
VGS = 10 V
VDD 50 V; starting Tj = 25˚C; RGS = 50 ;
VGS = 10 V
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
10.7
6.7
43
147
1.176
± 30
520
10
150
UNIT
A
A
A
W
W/K
V
mJ
A
˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
pcb mounted, minimum
footprint
TYP.
-
50
MAX.
0.85
-
UNIT
K/W
K/W
April 1997 1 Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHB10N40 Datasheet

PowerMOS transistor

No Preview Available !

Philips Semiconductors
PowerMOS transistor
Product specification
PHB10N40
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
V(BR)DSS /
Tj
RDS(ON)
VGS(TO)
gfs
IDSS
Drain-source breakdown
voltage
Drain-source breakdown
voltage temperature coefficient
Drain-source on resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
IGSS
Qg(tot)
Qgs
Qgd
td(on)
tr
td(off)
tf
Ld
Ld
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Ls Internal source inductance
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
VGS = 10 V; ID = 6 A
VDS = VGS; ID = 0.25 mA
VDS = 30 V; ID = 6 A
VDS = 400 V; VGS = 0 V
VDS = 320 V; VGS = 0 V; Tj = 125 ˚C
VGS = ±30 V; VDS = 0 V
ID = 10 A; VDD = 320 V; VGS = 10 V
VDD = 200 V; ID = 10 A;
RG = 9.1 ; RD = 20
Measured from tab to centre of die
Measured from drain lead solder
point to centre of die
Measured from source lead solder
point to source bond pad
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN.
400
-
-
2.0
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.4 - V/K
0.42 0.55
3.0 4.0
6.0 -
1 25
30 250
10 200
90 110
79
49 60
13 -
65 -
108 -
70 -
3.5 -
4.5 -
V
S
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
7.5 - nH
1080
190
110
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
Tmb = 25˚C
(body diode)
ISM Pulsed source current (body Tmb = 25˚C
diode)
VSD Diode forward voltage
IS = 10 A; VGS = 0 V
trr Reverse recovery time IS = 10 A; VGS = 0 V;
dI/dt = 100 A/µs
Qrr Reverse recovery charge
MIN. TYP. MAX. UNIT
- - 10.6 A
- - 43 A
- - 1.2 V
- 330 -
ns
- 4.8 - µC
April 1997 2 Rev 1.000


Part Number PHB10N40
Description PowerMOS transistor
Maker NXP
Total Page 7 Pages
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