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PHB108NQ03LT Datasheet

TrenchMOS logic level FET

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PHP/PHB/PHD108NQ03LT
TrenchMOS™ logic level FET
Rev. 02 — 11 September 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHP108NQ03LT in SOT78 (TO-220AB)
PHB108NQ03LT in SOT404 (D2-PAK)
PHD108NQ03LT in SOT428 (D-PAK).
1.2 Features
s Logic level compatible
s Very low on-state resistance
1.3 Applications
s DC to DC converters
s Switched mode power supplies
1.4 Quick reference data
s VDS = 25 V
s Ptot = 180 W
s ID = 75 A
s RDSon 6 m
2. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d) [1] mb
mb
mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
2
1 3 MBK116
2
1
Top view
3
MBK091
SOT78 (TO-220AB) SOT404 (D2-PAK) SOT428 (D-PAK)
Symbol
g
MBB076
[1] It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
d
s


NXP Semiconductors Electronic Components Datasheet

PHB108NQ03LT Datasheet

TrenchMOS logic level FET

No Preview Available !

Philips Semiconductors
PHP/PHB/PHD108NQ03LT
TrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
ID
drain-source voltage (DC)
drain-gate voltage (DC)
drain current (DC)
VGS gate-source voltage
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 175 oC
25 °C Tj 175 oC; RGS = 20 k
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2 and 3
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS source (diode forward) current (DC)
ISM peak source (diode forward) current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 43 A;
tp = 0.25 ms; VDD 15 V; RGS = 50 ;
VGS = 10 V; starting Tj = 25 °C
Min Max Unit
- 25 V
- 25 V
- 75 A
- 60 A
- ±20 V
- 108 A
- 180 W
55 +175 °C
55 +175 °C
- 75 A
- 108 A
- 180 mJ
9397 750 10159
Product data
Rev. 02 — 11 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 14


Part Number PHB108NQ03LT
Description TrenchMOS logic level FET
Maker NXP
Total Page 14 Pages
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