• Part: PESD5V0L2UMB
  • Description: Low capacitance unidirectional double ESD protection array
  • Manufacturer: NXP Semiconductors
  • Size: 229.25 KB
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NXP Semiconductors
PESD5V0L2UMB
PESD5V0L2UMB is Low capacitance unidirectional double ESD protection array manufactured by NXP Semiconductors.
description Low capacitance unidirectional double Electro Static Discharge (ESD) protection array designed to protect up to two signal lines from the damage caused by ESD and other transients. The device is housed in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits - ESD protection of up to two lines - Low diode capacitance Cd = 16 p F - Low clamping voltage VCL = 10 V - Ultra low leakage current IRM = 5 n A 1.3 Applications - puters and peripherals - Audio and video equipment - Cellular handsets and accessories - ESD protection up to 15 k V - IEC 61000-4-2; level 4 (ESD) - IEC 61000-4-5 (surge); IPPM = 2.5 A - AEC-Q101 qualified - Portable electronics - SIM card protection - munication systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Per diode VRWM Cd reverse standoff voltage diode capacitance Conditions f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5V - 16 19 p F NXP Semiconductors Low capacitance unidirectional double ESD protection array 2. Pinning information Table 2. Pin 1 2 3 Pinning Description cathode cathode mon anode Simplified outline Graphic symbol 1 3 Transparent top view 006aac923...