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PESD5V0L6US - Low Capacitance 6-fold Esd Protection Diode Array

Description

DESCRIPTION Low capacitance 6-fold ESD protection diode array in a small S08 plastic package designed to protect up to six transmission or data lines against damage caused by ElectroStatic Discharge (ESD) and other transients.

Features

  • Unidirectional ESD protection of up to 6 lines.
  • Bidirectional ESD protection of up to 5 lines.
  • Low diode capacitance.
  • Max. peak pulse power: Ppp = 35 W at tp = 8/20 µs.
  • Low clamping voltage: V(CL)R = 15 V at Ipp = 2.5 A.
  • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V.
  • ESD protection up to 20 kV.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC-61000-4-5 (surge); Ipp = 2.5 A at tp = 8/20 µs.

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Other Datasheets by NXP Semiconductors

Part Number Description
PESD5V0L6US Low capacitance 6-fold ESD protection diode arrays
PESD5V0L6UAS Low capacitance 6-fold ESD protection diode arrays
PESD5V0L1BA Low capacitance bidirectional ESD protection diodes
PESD5V0L1UA Low Capacitance Unidirectional ESD Protection Diodes
PESD5V0L1UB Low Capacitance Unidirectional ESD Protection Diodes

Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PESD5V0L6US Low capacitance 6-fold ESD protection diode array in SO8 package Product specification 2004 Feb 18 Philips Semiconductors Product specification Low capacitance 6-fold ESD protection diode array in SO8 package FEATURES • Unidirectional ESD protection of up to 6 lines • Bidirectional ESD protection of up to 5 lines • Low diode capacitance • Max. peak pulse power: Ppp = 35 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 15 V at Ipp = 2.5 A • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V • ESD protection up to 20 kV • IEC 61000-4-2; level 4 (ESD) • IEC-61000-4-5 (surge); Ipp = 2.5 A at tp = 8/20 µs.
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