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PBSS8110S - NPN low VCEsat (BISS) transistor

General Description

NPN low VCEsat BISS transistor in a SOT54 plastic package.

DESCRIPTION MARKING CODE S8110S 1 handbook, halfpage 2 3 PBSS8110S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collect

Key Features

  • SOT54 package.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PBSS8110S 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Nov 11 2004 Aug 13 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor FEATURES • SOT54 package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation. APPLICATIONS • Automotive 42 V power • Telecom infrastructure • General industrial applications • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Generic driver (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors).