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NXP Semiconductors Electronic Components Datasheet

PBSS8110S Datasheet

NPN low VCEsat (BISS) transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PBSS8110S
100 V, 1 A
NPN low VCEsat (BISS) transistor
Product specification
Supersedes data of 2003 Nov 11
2004 Aug 13


NXP Semiconductors Electronic Components Datasheet

PBSS8110S Datasheet

NPN low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
100 V, 1 A
NPN low VCEsat (BISS) transistor
Product specification
PBSS8110S
FEATURES
SOT54 package
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
Higher efficiency leading to less heat generation.
APPLICATIONS
Automotive 42 V power
Telecom infrastructure
General industrial applications
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
Peripheral drivers
– Generic driver (e.g. lamps and LEDs)
– Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTION
NPN low VCEsat BISS transistor in a SOT54 plastic
package.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX. UNIT
100 V
1A
3A
200 m
PINNING
PIN
1 base
2 collector
3 emitter
DESCRIPTION
handbook, halfpage1
2
3
1
MAM259
2
3
MARKING
TYPE NUMBER
PBSS8110S
MARKING CODE
S8110S
Fig.1 Simplified outline (SOT54) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PBSS8110S
NAME
PACKAGE
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
2004 Aug 13
2


Part Number PBSS8110S
Description NPN low VCEsat (BISS) transistor
Maker NXP
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PBSS8110S Datasheet PDF






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