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PBSS5630PA Datasheet

6 A PNP low VCEsat (BISS) transistor

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PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
Rev. 01 — 19 March 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4630PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp 300 s;   0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 6 A;
IB = 300 mA
Min Typ Max Unit
- - 30 V
- - 6 A
- - 7 A
[1] -
39 58 m


NXP Semiconductors Electronic Components Datasheet

PBSS5630PA Datasheet

6 A PNP low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
www.DataSheet4U.c
PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
3
12
Transparent top view
3
1
2
sym013
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
Version
PBSS5630PA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
no leads; three terminals; body 2 2 0.65 mm
4. Marking
Table 4. Marking codes
Type number
PBSS5630PA
Marking code
AB
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
Tamb 25 C
-
-
-
-
-
-
[1] -
[2] -
[3] -
[4] -
Max Unit
30 V
30 V
7 V
6 A
7 A
600
500
1
1.4
2.1
mA
mW
W
W
W
PBSS5630PA_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
2 of 15


Part Number PBSS5630PA
Description 6 A PNP low VCEsat (BISS) transistor
Maker NXP
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