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PBSS5420D Datasheet

PNP low VCEsat (BISS) transistor

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PBSS5420D
20 V, 4 A PNP low VCEsat (BISS) transistor
Rev. 02 — 29 September 2008
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4420D.
1.2 Features
I Very low collector-emitter saturation resistance
I Ultra low collector-emitter saturation voltage
I 4 A continuous collector current
I Up to 15 A peak current
I High efficiency leading to less heat generation
1.3 Applications
I Power management functions
I Charging circuits
I DC-to-DC conversion
I MOSFET gate driving
I Power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
tp 1 ms
IC = 4 A;
IB = 400 mA
-
[1] -
-
[2] -
- 20
- 4
- 15
50 70
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.
Unit
V
A
A
m


NXP Semiconductors Electronic Components Datasheet

PBSS5420D Datasheet

PNP low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
PBSS5420D
20 V, 4 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
collector
collector
base
emitter
collector
collector
Simplified outline Graphic symbol
654
123
1, 2, 5, 6
3
4
sym030
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBSS5420D
SC-74
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
4. Marking
Table 4. Marking codes
Type number
PBSS5420D
Marking code
D5
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
[1] -
-
-
-
[2] -
[3] -
[4] -
[1] -
[2][5] -
Max Unit
20 V
20 V
5 V
4 A
15 A
0.8 A
2 A
360 mW
600 mW
750 mW
1.1 W
2.5 W
PBSS5420D_2
Product data sheet
Rev. 02 — 29 September 2008
© NXP B.V. 2008. All rights reserved.
2 of 14


Part Number PBSS5420D
Description PNP low VCEsat (BISS) transistor
Maker NXP
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PBSS5420D Datasheet PDF






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