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MRF7S24250N - RF Power LDMOS Transistor

Key Features

  • Characterized with series equivalent large--signal impedance parameters.
  • Internally matched for ease of use.
  • Qualified up to a maximum of 32 VDD operation.
  • Integrated high performance ESD protection Typical.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXP Semiconductors Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET The 250 W CW RF power transistor is designed for industrial, scientific, medical (ISM) and industrial heating applications at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency rugged device is targeted to replace industrial magnetrons and will provide longer life and easier servicing. Typical Performance: In 2400–2500 MHz reference circuit, VDD = 32 Vdc Frequency Pin Gps D Pout (MHz) Signal Type (W) (dB) (%) (W) 2400 2450 2500 CW 9.0 14.5 55.5 255 9.0 14.7 54.8 263 9.0 14.3 55.