MRF7S24250N - RF Power LDMOS Transistor

NXP

MRF7S24250N Description

NXP Semiconductors Technical Data RF Power LDMOS Transistor N *Channel Enhancement *Mode Lateral MOSFET The 250 W CW RF power transist.

MRF7S24250N Features

* Characterized with series equivalent large
* signal impedance parameters
* Internally matched for ease of use
* Qualified up to a maximum of 32 VDD operation

MRF7S24250N Applications

* at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency rugged device is targeted to replace industrial magnetrons and will provide longer life and easier servicing. Typical Performance: In 2400
* 2500 MHz reference circuit, VDD = 32

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Datasheet Details

Part number: MRF7S24250N
Manufacturer: NXP ↗
File Size: 642.63 KB
Datasheet: MRF7S24250N-NXP.pdf
Description: RF Power LDMOS Transistor

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Power LDMOS Transistor NXP

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